Design of precision capacitors for analog applications

The authors describe and analyze two capacitors which are incorporated in a baseline BiCMOS technology without added process complexity. The first capacitor is formed between degenerated doped polysilicon and silicon. The second is formed between two degenerately doped polysilicon layers. In both st...

Full description

Saved in:
Bibliographic Details
Published in1992 Proceedings 42nd Electronic Components & Technology Conference pp. 583 - 590
Main Authors St Onge, S.A., Franz, S.G., Puttlitz, A.F., Kalinoski, A., Johnson, B.E., El-Kareh, B.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1992
Subjects
Analog-digital conversion
BiCMOS integrated circuits
Capacitance
CMOS technology
Dielectrics
Insulation
Low voltage
MOS capacitors
Silicon on insulator technology
Temperature
Online AccessGet full text

Cover

More Information
Summary:The authors describe and analyze two capacitors which are incorporated in a baseline BiCMOS technology without added process complexity. The first capacitor is formed between degenerated doped polysilicon and silicon. The second is formed between two degenerately doped polysilicon layers. In both structures, the insulator is a deposited or grown oxide. The sensitivity of the capacitor voltage coefficient to oxide thickness and surface dopant concentration is discussed theoretically and compared to measured data. The two capacitors are optimized to exhibit very low voltage coefficients.< >
ISBN:9780780301672
0780301676
DOI:10.1109/ECTC.1992.204262