InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular beam epitaxy

This paper presents the lasing properties of InAs/GaAs quantum dot (QD) lasers with InGaP cladding layers grown by solid-source molecular beam epitaxy. These Al-free lasers exhibit a threshold current density of 138 A/cm/sup 2/, an internal loss of 1.35 cm/sup -1/ and an internal quantum efficiency...

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Published inConference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) pp. 87 - 90
Main Authors Yeh, N.-T., Liu, W.-S., Chen, S.-H., Chiu, P.-J., Chyi, J.-I.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2001
Subjects
Capacitive sensors
Chemical lasers
Fiber lasers
Gallium arsenide
Molecular beam epitaxial growth
Quantum dot lasers
Solid lasers
Temperature
Threshold current
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Summary:This paper presents the lasing properties of InAs/GaAs quantum dot (QD) lasers with InGaP cladding layers grown by solid-source molecular beam epitaxy. These Al-free lasers exhibit a threshold current density of 138 A/cm/sup 2/, an internal loss of 1.35 cm/sup -1/ and an internal quantum efficiency of 31% at room temperature. At low temperature, a very high characteristic temperature of 425 K and very low threshold current density of 30 A/cm/sup 2/ are measured.
ISBN:0780367006
9780780367005
ISSN:1092-8669
DOI:10.1109/ICIPRM.2001.929025