Thermally induced stress relaxation of silicon dioxide on vicinal Si(111) studied with surface nonlinear-optical techniques

We report on optical second-harmonic (SH) and sum-frequency (SF) measurements from vicinal Si(111)-interfaces covered with a thermally grown oxide film and subjected to different annealing temperatures. We observed that the azimuthal anisotropy in the nonlinear optical response from the Si/SiO/sub 2...

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Published inProceedings of 1994 Nonlinear Optics: Materials, Fundamentals and Applications pp. 89 - 91
Main Authors Lupke, G., Wolter, F., Emmerichs, U., Meyer, C., Kurz, H., Yasuda, T., Lucovsky, G., Bjorkman, C.H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1994
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Summary:We report on optical second-harmonic (SH) and sum-frequency (SF) measurements from vicinal Si(111)-interfaces covered with a thermally grown oxide film and subjected to different annealing temperatures. We observed that the azimuthal anisotropy in the nonlinear optical response from the Si/SiO/sub 2/ interface changes after rapid thermal annealing (RTA).< >
ISBN:9780780314733
0780314735
DOI:10.1109/NLO.1994.470884