Thermally induced stress relaxation of silicon dioxide on vicinal Si(111) studied with surface nonlinear-optical techniques

We report on optical second-harmonic (SH) and sum-frequency (SF) measurements from vicinal Si(111)-interfaces covered with a thermally grown oxide film and subjected to different annealing temperatures. We observed that the azimuthal anisotropy in the nonlinear optical response from the Si/SiO/sub 2...

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Bibliographic Details
Published inProceedings of 1994 Nonlinear Optics: Materials, Fundamentals and Applications pp. 89 - 91
Main Authors Lupke, G., Wolter, F., Emmerichs, U., Meyer, C., Kurz, H., Yasuda, T., Lucovsky, G., Bjorkman, C.H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1994
Subjects
Geometrical optics
Nonlinear optics
Optical films
Optical pulse generation
Power generation
Pulse amplifiers
Rapid thermal annealing
Silicon compounds
Temperature
Thermal stresses
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Summary:We report on optical second-harmonic (SH) and sum-frequency (SF) measurements from vicinal Si(111)-interfaces covered with a thermally grown oxide film and subjected to different annealing temperatures. We observed that the azimuthal anisotropy in the nonlinear optical response from the Si/SiO/sub 2/ interface changes after rapid thermal annealing (RTA).< >
ISBN:9780780314733
0780314735
DOI:10.1109/NLO.1994.470884