Time dependence power laws of hot carrier degradation in SOI MOSFETS

• Published in: 1996 IEEE International SOI Conference Proceedings pp. 18 - 19
• Main Authors: Sinha, S.P., Duan, F.L., Ioannou, D.E., Jenkins, W.C., Hughes, H.L.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1996
• Subjects: Charge carrier processes; Charge measurement; Charge pumps; Current measurement; Degradation; Hot carrier injection; Hot carriers; Interface states; MOSFETs; Power generation
• ISBN: 0780333152; 9780780333154
• ISSN: 1078-621X; 2577-2295
• DOI: 10.1109/SOI.1996.552472

The opposite channel based charge injection phenomenon in SOI MOSFETs provides a powerful tool, as it makes it possible for the first time to inject only holes or only electrons in regular, working MOSFETs. In this paper opposite channel based hot carrier injection has been combined with charge pumping measurements and the effects of pure hot electron/hole injection were investigated. n channel devices were used for the pure hole injection experiments, and p channel ones for the electron injection. The results demonstrate that both pure hole and pure electron injection give rise to interface state generation obeying a time power law. Based on these and other results, a conclusion is drawn that the purity of the injection pulse is responsible for the time power law, regardless of whether holes or electrons are injected. In contrast, when bipolar injection (mixture of holes and electrons) was applied, our results showed a familiar pattern.