Improved composition and thickness control of III-V epitaxy in a metalorganic chemical vapor deposition process

Metalorganic chemical vapor deposition (MOCVD) is a promising technology for the fabrication of high speed electronic and opto-electronic devices. Commercial application of this technique is limited by a high degree of process variance. This paper describes work in progress on the development of a c...

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Bibliographic Details
Published inProceedings of 1995 34th IEEE Conference on Decision and Control Vol. 3; pp. 2490 - 2495 vol.3
Main Authors Gaffney, M.S., Smith, R.S., Holmes, A.L., Reaves, C.M., DenBaars, S.P.
Format Conference Proceeding
LanguageEnglish
Published IEEE Control Systems Society 1995
Subjects
Chemical technology
Chemical vapor deposition
Epitaxial growth
Fabrication
Gallium arsenide
High-speed electronics
III-V semiconductor materials
MOCVD
Optoelectronic devices
Thickness control
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Summary:Metalorganic chemical vapor deposition (MOCVD) is a promising technology for the fabrication of high speed electronic and opto-electronic devices. Commercial application of this technique is limited by a high degree of process variance. This paper describes work in progress on the development of a closed loop MOCVD facility for GaAs device fabrication. Critical system disturbances, which degrade the growth rate uniformity and reproducibility, and subsequent device performance, are identified. A control system is designed and implemented to regulate the supply of gallium to the reactor. The controller performance is investigated by growing GaInAs/InP superlattices. Post-growth tests clearly illustrate that the compensated samples have better precision in alloy composition and thickness.
ISBN:0780326857
9780780326859
ISSN:0191-2216
DOI:10.1109/CDC.1995.478465