Improved composition and thickness control of III-V epitaxy in a metalorganic chemical vapor deposition process
Metalorganic chemical vapor deposition (MOCVD) is a promising technology for the fabrication of high speed electronic and opto-electronic devices. Commercial application of this technique is limited by a high degree of process variance. This paper describes work in progress on the development of a c...
Saved in:
Published in | Proceedings of 1995 34th IEEE Conference on Decision and Control Vol. 3; pp. 2490 - 2495 vol.3 |
---|---|
Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE Control Systems Society
1995
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Metalorganic chemical vapor deposition (MOCVD) is a promising technology for the fabrication of high speed electronic and opto-electronic devices. Commercial application of this technique is limited by a high degree of process variance. This paper describes work in progress on the development of a closed loop MOCVD facility for GaAs device fabrication. Critical system disturbances, which degrade the growth rate uniformity and reproducibility, and subsequent device performance, are identified. A control system is designed and implemented to regulate the supply of gallium to the reactor. The controller performance is investigated by growing GaInAs/InP superlattices. Post-growth tests clearly illustrate that the compensated samples have better precision in alloy composition and thickness. |
---|---|
ISBN: | 0780326857 9780780326859 |
ISSN: | 0191-2216 |
DOI: | 10.1109/CDC.1995.478465 |