Physical-optical properties of LPCVD amorphous silicon rich-nitride and oxynitride

• Published in: 1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Vol. 1; pp. 201 - 204 vol.1
• Main Authors: Modreanu, M., Tomozeiu, N., Cosmin, P., Gartner, M.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1998
• Subjects: Amorphous silicon; Chemical vapor deposition; Deconvolution; Electromagnetic wave absorption; Fluid flow; Fourier transforms; Infrared spectra; Optical films; Refractive index; Semiconductor films
• ISBN: 9780780344327; 0780344324
• DOI: 10.1109/SMICND.1998.732342

Low pressure chemical vapour deposition (LPCVD) silicon oxynitride and silicon-rich nitride films of various composition (from pure SiO/sub 2/ to pure Si/sub 3/N/sub 4/) were deposited by changing the relative gas flow ratio N/sub 2/O to NH/sub 3/ and SiH/sub 2/Cl/sub 2/ to NH/sub 3/, respectively. The effects of oxygen on the physical properties of the films were studied using spectroellipsometry and Fourier transform infrared spectroscopy. The deconvolution of the IR spectra was made. The characteristic absorption peak for Si/sub 3/N/sub 4/ is at 822 cm/sup -1/ (Si-N bonds), and for SiO/sub x/N/sub y/ is around 973 cm/sup -4/ (Si-O-Si bond). Higher oxygen content decreases the refractive index of SiO/sub x/N/sub y/ films, whereas more silicon in silicon nitride increases the refractive index. The refractive index dispersion is studied by the single-oscillator Wemple Di Domenico model. The optical gap varies monotonically from 5.43 eV for silicon nitride to 9 eV for HTO LPCVD silicon dioxide, and for silicon oxynitride was found to be around 6 eV.