Electrical degradation of CMOS devices due to focused ion beam exposure

• Published in: 1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100) pp. 128 - 131
• Main Authors: Benbrik, J., Perdu, P., Benteo, B., Desplats, S., Labat, N., Touboul, A., Danto, Y.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1998
• Subjects: Circuit simulation; Degradation; Ion beams; Passivation; Performance evaluation; Plasma devices; Plasma measurements; Semiconductor device modeling; Surface charging; Testing

Focused ion beams degrade CMOS devices by charging up the device surface. The presence of ions on the device surface is comparable to a plasma. We have performed measurements on CMOS test devices, and have hence modeled the influence of focused ion beams on transistors below the passivation layer. A...