Electrical degradation of CMOS devices due to focused ion beam exposure

Focused ion beams degrade CMOS devices by charging up the device surface. The presence of ions on the device surface is comparable to a plasma. We have performed measurements on CMOS test devices, and have hence modeled the influence of focused ion beams on transistors below the passivation layer. A...

Full description

Saved in:
Bibliographic Details
Published in1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100) pp. 128 - 131
Main Authors Benbrik, J., Perdu, P., Benteo, B., Desplats, S., Labat, N., Touboul, A., Danto, Y.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1998
Subjects
Circuit simulation
Degradation
Ion beams
Passivation
Performance evaluation
Plasma devices
Plasma measurements
Semiconductor device modeling
Surface charging
Testing
Online AccessGet full text

Cover

More Information
Summary:Focused ion beams degrade CMOS devices by charging up the device surface. The presence of ions on the device surface is comparable to a plasma. We have performed measurements on CMOS test devices, and have hence modeled the influence of focused ion beams on transistors below the passivation layer. An in-depth analysis of these results has allowed us to characterize the modification of intrinsic parameters down to the semiconductor level. We have extracted these parameters in order to simulate FIB induced degradation on integrated circuits. These simulations aim to predict the impact of FIBs on the reliability of integrated circuits under irradiation.
ISBN:0965157725
9780965157728
DOI:10.1109/PPID.1998.725591