Experimental verification of large current capability of lateral IEGTs on SOI

This paper reports, for the first time, the experimentally obtained electrical characteristics of lateral injection enhanced insulated gate bipolar transistors (LIEGTs) on SOI. It is shown that optimized LIEGTs have twice as large a current capability as LIGBTs and attain the same turn-off character...

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Bibliographic Details
Published in8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings pp. 97 - 100
Main Authors Yasuhara, N., Funaki, H., Matsudai, T., Nakagawa, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1996
Subjects
Conductivity
Dielectrics
Electric variables
Insulated gate bipolar transistors
Isolation technology
Laboratories
Numerical simulation
Power integrated circuits
Silicon compounds
Threshold voltage
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Summary:This paper reports, for the first time, the experimentally obtained electrical characteristics of lateral injection enhanced insulated gate bipolar transistors (LIEGTs) on SOI. It is shown that optimized LIEGTs have twice as large a current capability as LIGBTs and attain the same turn-off characteristics. These results show that LIEGTs are attractive for the output devices of high voltage power ICs.
ISBN:0780331060
9780780331068
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.1996.509457