Structural and thermoelectric properties of MBE-grown doped and undoped BiSb alloy thin films

We have successfully grown BiSb alloy thin films on CdTe(111)B over a wide range of Sb compositions using molecular beam epitaxy. It is well known that small bandgap (/spl sim/18 meV) bulk BiSb alloys are good n-type thermoelements at liquid nitrogen temperature. We have observed that the power fact...

Full description

Saved in:
Bibliographic Details
Published inSeventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) pp. 284 - 287
Main Authors Cho, S., DiVenere, A., Yunki Kim, Wong, G.K., Ketterson, J.B., Meyer, J.R., Hoffman, C.A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1998
Subjects
Doping
Electric resistance
Molecular beam epitaxial growth
Nitrogen
Photonic band gap
Reactive power
Temperature
Thermoelectricity
Tin alloys
Transistors
Online AccessGet full text

Cover

More Information
Summary:We have successfully grown BiSb alloy thin films on CdTe(111)B over a wide range of Sb compositions using molecular beam epitaxy. It is well known that small bandgap (/spl sim/18 meV) bulk BiSb alloys are good n-type thermoelements at liquid nitrogen temperature. We have observed that the power factor (S/sup 2//spl sigma/) for MBE-grown 1 /spl mu/m thick BiSb thin films grown on CdTe(111) peak at a significantly higher temperature (250 K) than previous results for the bulk alloy (80 K), possibly due to an enhanced bandgap. For doping experiments we used the group IV(VI) element Sn(Te) as an acceptor(donor). Thermoelectric Power (TEP) and electrical resistivity were studied in the range of temperatures 2-300 K. Doping Sn into the BiSb system causes the TEP to change sign (from negative to positive), and the maximum value of the TEP can be controlled with the Sn dopant concentration.
ISBN:9780780349070
0780349075
ISSN:1094-2734
DOI:10.1109/ICT.1998.740374