Optics for EUV lithography

Extreme Ultraviolet Lithography (EUVL), using 13 nm radiation, has a high probability to become the Next Generation Lithography of choice for resolutions of 50 nm and below. The work at CARL ZEISS focusses on the development of optical system design and core technologies necessary for the industrial...

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Published inDigest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) p. 264
Main Authors Kurz, P., Mann, H.-J., Antoni, M., Singer, W., Muhlbeyer, M., Melzer, F., Dinger, U., Weiser, M., Stacklies, S., Seitz, G., Haidl, F., Sohmen, E., Kaiser, W.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
Subjects
Coatings
Electronic mail
Lithography
Metrology
Mirrors
Optical design
Optical design techniques
Optical device fabrication
Ultraviolet sources
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Summary:Extreme Ultraviolet Lithography (EUVL), using 13 nm radiation, has a high probability to become the Next Generation Lithography of choice for resolutions of 50 nm and below. The work at CARL ZEISS focusses on the development of optical system design and core technologies necessary for the industrialization of EUVL optical systems.
ISBN:9784891140045
4891140046
DOI:10.1109/IMNC.2000.872750