Compact high gain W-band and V-band pseudomorphic HEMT MMIC power amplifiers

A monolithic, three-stage W-band power amplifier, developed using pseudomorphic HEMTs, has exhibited record gain, power per unit gate width, and power per unit area. The amplifier has a small signal gain of 22-dB and an output power of 37-mW with an associated gain of 10-dB. A three-stage V-band pow...

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Bibliographic Details
Published inProceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium pp. 33 - 36
Main Authors Duncan, S.W., Eskandarian, A., Gill, D., Golja, B., Power, B., Tu, D.W., Svensson, S., Weinreb, S., Zimmerman, M., Byer, N.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1994
Subjects
Circuit synthesis
Costs
Coupling circuits
Design optimization
High power amplifiers
Integrated circuit yield
MMICs
PHEMTs
Power amplifiers
Power generation
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Summary:A monolithic, three-stage W-band power amplifier, developed using pseudomorphic HEMTs, has exhibited record gain, power per unit gate width, and power per unit area. The amplifier has a small signal gain of 22-dB and an output power of 37-mW with an associated gain of 10-dB. A three-stage V-band power amplifier with record gain and power per unit area has also been fabricated on the same wafer with a small signal gain of 16-dB and an output power of 112-mW with an associated gain of 8-dB.< >
ISBN:0780314182
9780780314184
DOI:10.1109/MCS.1994.332148