A novel surface-oxidized barrier-SiN cell technology to improve endurance and read-disturb characteristics for gigabit NAND flash memories

This paper describes a novel surface-oxidized barrier-SiN cell technology to effect a tenfold improvement in endurance and read disturb characteristics. In conventional memory cells, degradation of tunnel oxides due to barrier-SiN films for Self-Aligned Contact (SAC) limits the scaling of memory cel...

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Bibliographic Details
Published inInternational Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) pp. 771 - 774
Main Authors Goda, A., Moriyama, W., Hazama, H., Iizuka, H., Shimizu, K., Aritome, S., Shirota, R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
Subjects
Etching
Flash memory
Hydrogen
MOS capacitors
Occupational stress
Oxidation
Pulp manufacturing
Silicon compounds
Thermal degradation
Voltage
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Summary:This paper describes a novel surface-oxidized barrier-SiN cell technology to effect a tenfold improvement in endurance and read disturb characteristics. In conventional memory cells, degradation of tunnel oxides due to barrier-SiN films for Self-Aligned Contact (SAC) limits the scaling of memory cells. The proposed technology overcomes this problem by an additional oxidation process subsequent to barrier-SiN deposition to reduce hydrogen in both SiN film and tunnel oxide. 0.18 /spl mu/m-rule NAND cells fabricated by the proposed technology demonstrate a tenfold improvement in allowable program/erase cycles and read disturb lifetime without any deterioration of other cell properties.
ISBN:9780780364387
0780364384
DOI:10.1109/IEDM.2000.904431