A low noise, high gain Q-band monolithic HEMT receiver

A fully integrated MMIC receiver for Q-band was designed and fabricated using a 0.2 /spl mu/m pseudomorphic InGaAs HEMT technology process. This incorporates 3 microcells into a single macrocell. It contains a front end LNA which consists of a four stage balanced HEMT amplifier, a double-balanced HE...

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Bibliographic Details
Published inProceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium pp. 217 - 220
Main Authors Aust, M.V., Alien, B., Dow, G.S., Kasody, R., Biedenbender, M., Wang, N.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1994
Subjects
Circuits
Fingers
Gain
HEMTs
Impedance matching
Millimeter wave technology
Noise figure
Radio frequency
Radiofrequency amplifiers
Space technology
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Summary:A fully integrated MMIC receiver for Q-band was designed and fabricated using a 0.2 /spl mu/m pseudomorphic InGaAs HEMT technology process. This incorporates 3 microcells into a single macrocell. It contains a front end LNA which consists of a four stage balanced HEMT amplifier, a double-balanced HEMT diode mixer, and a 2 stage HEMT IF amplifier. This forms a highly compact millimeter MMIC receiver. Better than 30 dB conversion gain with a Noise figure of 3.5 dB for the downconverter is achieved. This chip operates from a +3 Vdc and draws 85 mA. Total chip size is 5.0 mm/spl times/3.0 mm.< >
ISBN:0780314182
9780780314184
DOI:10.1109/MCS.1994.332100