Influence of die attachment on MOS transistor matching

A test chip which allows the experimental study of the influence of die residual stresses on MOS transistor matching, in a standard 0.7 /spl mu/m CMOS technology, is described. The influence of eutectic die bonding on transistor matching is found to be a major degradation factor. Polyimide bonded di...

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Bibliographic Details
Published inProceedings of International Conference on Microelectronic Test Structures pp. 27 - 31
Main Authors Bastos, J., Steyaert, M., Graindourze, B., Sansen, W.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1996
Subjects
Area measurement
Degradation
Measurement standards
MOSFETs
Polyimides
Q measurement
Semiconductor device modeling
Testing
Wafer bonding
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Summary:A test chip which allows the experimental study of the influence of die residual stresses on MOS transistor matching, in a standard 0.7 /spl mu/m CMOS technology, is described. The influence of eutectic die bonding on transistor matching is found to be a major degradation factor. Polyimide bonded dies do not significantly affect the matching performance of MOS transistors.
ISBN:0780327837
9780780327832
DOI:10.1109/ICMTS.1996.535617