Low voltage carrier injection in ZnSe-based blue-green laser diodes on p-type GaAs substrates with InGaAlP band offset reduction layers

Summary form only given. A low voltage current injection is demonstrated theoretically and experimentally for ZnSe/CdZnSe blue-green lasers. Insertion of InGaAlP layers reduce the excess voltage drop, due to the large valence band offset between the p-type GaAs substrate and p-type ZnSe layer. The I...

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Bibliographic Details
Published inProceedings of IEEE 14th International Semiconductor Laser Conference pp. 199 - 200
Main Authors Ishikawa, M., Nishikawa, Y., Saito, S., Onomura, M., Parbrook, P.J., Nitta, K., Rennie, J., Hatakoshi, G.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1994
Subjects
Current density
Current measurement
Diode lasers
Doping profiles
Electrons
Gallium arsenide
Low voltage
Nitrogen
Voltage measurement
Zinc compounds
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Summary:Summary form only given. A low voltage current injection is demonstrated theoretically and experimentally for ZnSe/CdZnSe blue-green lasers. Insertion of InGaAlP layers reduce the excess voltage drop, due to the large valence band offset between the p-type GaAs substrate and p-type ZnSe layer. The InGaAlP layers are also useful as high concentration p-type ZnSe layers can be grown on them.
ISBN:0780317548
9780780317543
DOI:10.1109/ISLC.1994.519333