Wide-bandgap hydrogenated amorphous silicon carbide prepared from an aromatic carbon source

By utilizing the aromatic molecule xylene, hydrogenated amorphous silicon carbide films are prepared for the first time from an aromatic carbon source. Good-quality films are obtained, over a wide range of optical bandgaps from 2.2 to 3.5 eV and carbon content from 0.4 to 0.9 atomic fraction. Infrar...

Full description

Saved in:
Bibliographic Details
Published inThe Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991 pp. 1347 - 1351 vol.2
Main Authors Nevin, W.A., Yamagishi, H., Asaoka, K., Tawada, Y.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1991
Subjects
Amorphous silicon
Atom optics
Atomic layer deposition
Atomic measurements
Bonding
Conducting materials
Optical films
Organic materials
Photonic band gap
Semiconductor films
Online AccessGet full text

Cover

More Information
Summary:By utilizing the aromatic molecule xylene, hydrogenated amorphous silicon carbide films are prepared for the first time from an aromatic carbon source. Good-quality films are obtained, over a wide range of optical bandgaps from 2.2 to 3.5 eV and carbon content from 0.4 to 0.9 atomic fraction. Infrared measurements indicate that the films contain a large amount of aromatic and olefinic sp/sup 2/ carbon bonding, the extent of which depends strongly on the deposition conditions. This unsaturated carbon imparts an unusual property to the material in that it can be doped with an electron acceptor, which increases the electrical conductivity by several orders of magnitude, in a manner similar to organic semiconductors.< >
ISBN:0879426365
9780879426361
DOI:10.1109/PVSC.1991.169427