Study of the optical and electrical properties of InGaAs quantum well lasers with carbon doped cladding layer

The optical and electrical properties of carbon doped AlGaAs/GaAs/InGaAs strained quantum well (QW) lasers grown by metalorganic chemical vapor deposition (MOCVD) have been studied. During annealing at the different conditions, the samples exhibit some changes in the photoluminescence (PL) character...

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Bibliographic Details
Published in1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) pp. 629 - 632
Main Authors Yin Tao, Gao Guo, Chen Changhua, Xu Zuntu, Lian Peng, Tao Changbao, Zhao Hongdong, Du Jinyu, Zou Desu, Chen Jianxin, Shen Guangdi
Format Conference Proceeding
LanguageEnglish
Published IEEE 1998
Subjects
Annealing
Chemical lasers
Chemical vapor deposition
Density measurement
Gallium arsenide
Indium gallium arsenide
MOCVD
Photoluminescence
Quantum well lasers
Zinc
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Summary:The optical and electrical properties of carbon doped AlGaAs/GaAs/InGaAs strained quantum well (QW) lasers grown by metalorganic chemical vapor deposition (MOCVD) have been studied. During annealing at the different conditions, the samples exhibit some changes in the photoluminescence (PL) characteristics, the intensity of the PL spectrum will be elevated. The current-voltage (I-V) characteristics of InGaAs strained lasers doped with carbon and zinc are measured at the same injection current densities to study the electrical properties of carbon doped lasers.
ISBN:0780343069
9780780343061
DOI:10.1109/ICSICT.1998.785968