APA (7th ed.) Citation

Oishi, T., Koga, Y., Harada, K., & Kasu, M. (2015). High-mobility β-Ga2O3() single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact. Applied physics express, 8(3), . https://doi.org/10.7567/APEX.8.031101

Chicago Style (17th ed.) Citation

Oishi, Toshiyuki, Yuta Koga, Kazuya Harada, and Makoto Kasu. "High-mobility β-Ga2O3() Single Crystals Grown by Edge-defined Film-fed Growth Method and Their Schottky Barrier Diodes with Ni Contact." Applied Physics Express 8, no. 3 (2015). https://doi.org/10.7567/APEX.8.031101.

MLA (9th ed.) Citation

Oishi, Toshiyuki, et al. "High-mobility β-Ga2O3() Single Crystals Grown by Edge-defined Film-fed Growth Method and Their Schottky Barrier Diodes with Ni Contact." Applied Physics Express, vol. 8, no. 3, 2015, https://doi.org/10.7567/APEX.8.031101.