High-mobility β-Ga2O3() single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

High-Hall-electron-mobility and high-performance Schottky barrier diodes for edge-defined fed-grown () β-Ga2O3 single crystals have been demonstrated. A high electron mobility of 886 cm2/(V·s) at 85 K was obtained. By theoretical specific scattering mechanisms, it was found that the electron mobilit...

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Bibliographic Details
Published inApplied physics express Vol. 8; no. 3
Main Authors Oishi, Toshiyuki, Koga, Yuta, Harada, Kazuya, Kasu, Makoto
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.03.2015
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Summary:High-Hall-electron-mobility and high-performance Schottky barrier diodes for edge-defined fed-grown () β-Ga2O3 single crystals have been demonstrated. A high electron mobility of 886 cm2/(V·s) at 85 K was obtained. By theoretical specific scattering mechanisms, it was found that the electron mobility for >200 K is limited by optical phonon scattering and that for <100 K by ionized impurity scattering. On Schottky barrier diodes with Ni contacts, the current density for the forward voltage was 70.3 A/cm2 at 2.0 V, and a nearly ideal ideality factor of 1.01 was obtained.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.8.031101