Proposal for a new room temperature X-ray detector-thallium lead-iodide

Numerous compounds have been considered for room temperature semiconductor detector application, but most of them suffer from difficulties of crystal growth, fabrication and handling. Here we propose TlPbI/sub 3/, as a promising candidate, which does not have any structural phase transitions between...

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Published in1999 IEEE Nuclear Science Symposium. Conference Record. 1999 Nuclear Science Symposium and Medical Imaging Conference (Cat. No.99CH37019) Vol. 2; pp. 741 - 743 vol.2
Main Author Kocsis, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1999
Subjects
Crystalline materials
Fabrication
Photoconducting materials
Photoconductivity
Photonic band gap
Proposals
Solid state circuits
Temperature
X-ray detection
X-ray detectors
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Summary:Numerous compounds have been considered for room temperature semiconductor detector application, but most of them suffer from difficulties of crystal growth, fabrication and handling. Here we propose TlPbI/sub 3/, as a promising candidate, which does not have any structural phase transitions between room temperature and melting point and it is non-layered, with rhombohedral crystal structure. The low vapour pressure makes the crystal growth easier and it has a low melting point (619 K), high Z, high density (6.6 g/cm/sup 3/), and bandgap of 2.3 eV. X-ray photoconductivity measurements indicate that this material can be used as a room temperature solid state detector.
ISBN:9780780356962
0780356969
ISSN:1082-3654
2577-0829
DOI:10.1109/NSSMIC.1999.845774