Proposal for a new room temperature X-ray detector-thallium lead-iodide
Numerous compounds have been considered for room temperature semiconductor detector application, but most of them suffer from difficulties of crystal growth, fabrication and handling. Here we propose TlPbI/sub 3/, as a promising candidate, which does not have any structural phase transitions between...
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Published in | 1999 IEEE Nuclear Science Symposium. Conference Record. 1999 Nuclear Science Symposium and Medical Imaging Conference (Cat. No.99CH37019) Vol. 2; pp. 741 - 743 vol.2 |
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Main Author | |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
1999
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Subjects | |
Online Access | Get full text |
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Summary: | Numerous compounds have been considered for room temperature semiconductor detector application, but most of them suffer from difficulties of crystal growth, fabrication and handling. Here we propose TlPbI/sub 3/, as a promising candidate, which does not have any structural phase transitions between room temperature and melting point and it is non-layered, with rhombohedral crystal structure. The low vapour pressure makes the crystal growth easier and it has a low melting point (619 K), high Z, high density (6.6 g/cm/sup 3/), and bandgap of 2.3 eV. X-ray photoconductivity measurements indicate that this material can be used as a room temperature solid state detector. |
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ISBN: | 9780780356962 0780356969 |
ISSN: | 1082-3654 2577-0829 |
DOI: | 10.1109/NSSMIC.1999.845774 |