Multiple attachment GaAs-on-Si hybrid optoelectronic/VLSI chips

For several years we have been developing an optoelectronic/VLSI (OE/VLSI) chip technology based on flipchip bonding of GaAs optoelectronic chips onto CMOS silicon followed by substrate removal. Our optoelectronic devices are currently surface normal modulators, which also function as the input dete...

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Bibliographic Details
Published inDigest IEEE/Leos 1996 Summer Topical Meeting. Advanced Applications of Lasers in Materials and Processing pp. 24 - 25
Main Authors Goossen, K.W., Tseng, B., Hui, S.P., Walker, J.A., Leibenguth, R., Chirovsky, L.M.F., Krishnamoort, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1996
Subjects
Bonding
Circuits
Clocks
CMOS technology
Detectors
Gallium arsenide
Optical receivers
Silicon
Surface emitting lasers
Very large scale integration
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Summary:For several years we have been developing an optoelectronic/VLSI (OE/VLSI) chip technology based on flipchip bonding of GaAs optoelectronic chips onto CMOS silicon followed by substrate removal. Our optoelectronic devices are currently surface normal modulators, which also function as the input detectors. Finally, we have demonstrated an OE/VLSI switching chip with >140000 CMOS gates and 4352 modulators that operated with a clock rate of 400 Mbit/sec.
ISBN:0780331753
9780780331754
DOI:10.1109/LEOSST.1996.540728