Broad beam ion implanter with the use of radio frequency ion source

The project starts with the design of the broad beam RF ion source and the single gap accelerating column. The preliminary results of the source show that the ion current extracted from the source could reach /spl sime/30 mA with extraction voltage /spl sime/2 kV. The beam uniformity is achieved by...

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Bibliographic Details
Published inProceedings of 17th International Symposium on Discharges and Electrical Insulation in Vacuum Vol. 2; pp. 589 - 593 vol.2
Main Authors Abdelaziz, M.E., Zakhary, S.G., Ghanem, A.A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1996
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Summary:The project starts with the design of the broad beam RF ion source and the single gap accelerating column. The preliminary results of the source show that the ion current extracted from the source could reach /spl sime/30 mA with extraction voltage /spl sime/2 kV. The beam uniformity is achieved by the use of a multiaperture graphite cathode designed to make perveance matching to the normal Gaussian distribution of the ion beam. The beam uniformity could reach /spl sime/66% of the beam width of /spl sime/6 cm. A design is made of the single gap accelerating column based on tracing of beam lines inside the accelerating gap and estimation of the minimum value of the electric field required to contain the beam against space charge expansion to achieve minimum beam emittance without aberrations.
ISBN:9780780329065
0780329066
DOI:10.1109/DEIV.1996.545431