Manufacturing technology for high performance HBT linear power amplifiers

A straightforward HBT MMIC process technology based on an emitter-to-base realigned approach and single-step thick emitter metallization technique has produced highly linear efficient HBTs and power MMICs with high yields. The power transistor cell achieved 72% PAE with 0.17 W at 6 GHz. The two tone...

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Bibliographic Details
Published inProceedings of 1994 IEEE GaAs IC Symposium pp. 127 - 130
Main Authors Yang, L.W., Komiak, J.J., Smith, D.P., Kao, M.Y., Brozovich, R.S., Nordheden, K.J., Helms, D.R., Houston, D.E., Bardsley, F.R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1994
Subjects
Current density
Fabrication
Heterojunction bipolar transistors
High power amplifiers
Linearity
Manufacturing processes
Microwave devices
MMICs
Power amplifiers
Power generation
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Summary:A straightforward HBT MMIC process technology based on an emitter-to-base realigned approach and single-step thick emitter metallization technique has produced highly linear efficient HBTs and power MMICs with high yields. The power transistor cell achieved 72% PAE with 0.17 W at 6 GHz. The two tone saturated power of the MMIC achieved 36.4% PAE at 10 GHz. The IMD is 30 dBc at 5 dB back-off from 2 dB gain compression.
ISBN:9780780319752
0780319753
ISSN:1064-7775
2379-5638
DOI:10.1109/GAAS.1994.636947