Manufacturing technology for high performance HBT linear power amplifiers
A straightforward HBT MMIC process technology based on an emitter-to-base realigned approach and single-step thick emitter metallization technique has produced highly linear efficient HBTs and power MMICs with high yields. The power transistor cell achieved 72% PAE with 0.17 W at 6 GHz. The two tone...
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Published in | Proceedings of 1994 IEEE GaAs IC Symposium pp. 127 - 130 |
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Main Authors | , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
1994
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Subjects | |
Online Access | Get full text |
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Summary: | A straightforward HBT MMIC process technology based on an emitter-to-base realigned approach and single-step thick emitter metallization technique has produced highly linear efficient HBTs and power MMICs with high yields. The power transistor cell achieved 72% PAE with 0.17 W at 6 GHz. The two tone saturated power of the MMIC achieved 36.4% PAE at 10 GHz. The IMD is 30 dBc at 5 dB back-off from 2 dB gain compression. |
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ISBN: | 9780780319752 0780319753 |
ISSN: | 1064-7775 2379-5638 |
DOI: | 10.1109/GAAS.1994.636947 |