Ion-implanted silicon detectors of nuclear radiation

The silicon detectors of nuclear radiation are produced by ion implantation. The comparison of the characteristics of detectors conducted by various ways and with use of different modes was carried out. It was shown that with use of optimum modes of manufacturing the detectors have good energy resol...

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Bibliographic Details
Published in2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) pp. 95 - 98
Main Authors Yrchuk, S.Yu, Kol'tsov, G.I., Kuts, V.A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
Subjects
Gettering
Ion implantation
Manufacturing processes
Oxidation
P-n junctions
Production
Radiation detectors
Semiconductor device manufacture
Silicon radiation detectors
Strips
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Summary:The silicon detectors of nuclear radiation are produced by ion implantation. The comparison of the characteristics of detectors conducted by various ways and with use of different modes was carried out. It was shown that with use of optimum modes of manufacturing the detectors have good energy resolution. It was shown also, that the produced structures can work as photocells in pairs with scintillators.
ISBN:9780780364622
0780364627
DOI:10.1109/IIT.2000.924099