An ion-implanted 13 watt C-band MMIC with 60% peak power added efficiency

A GaAs MMIC power amplifier that produces in excess of 13 watts of RF power at 60% peak power added efficiency operating in C-band has been developed. Output power over 12 watts at better than 52% PAE has been measured over a 23% fractional bandwidth. The nominal circuit has been designed using non-...

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Bibliographic Details
Published inIEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers pp. 25 - 28
Main Authors Pribble, W.L., Griffin, E.L.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1996
Subjects
Bandwidth
Circuits
Design optimization
Gallium arsenide
MMICs
Power amplifiers
Power generation
Power measurement
Radio frequency
Radiofrequency amplifiers
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Summary:A GaAs MMIC power amplifier that produces in excess of 13 watts of RF power at 60% peak power added efficiency operating in C-band has been developed. Output power over 12 watts at better than 52% PAE has been measured over a 23% fractional bandwidth. The nominal circuit has been designed using non-linear modelling techniques and optimized empirically through fabrication and analysis of an 18-element Taguchi orthogonal array of circuits. The array circuits have been fabricated using ITT-GTC's Multi-Function Self Aligned Gate process.
ISBN:9780780333604
0780333608
DOI:10.1109/MCS.1996.506296