Behaviors Of Plasma-induced Pre-tunneling Leakage Current In MOS Capacitor

Saved in:
Bibliographic Details
Published in2nd International Symposium on Plasma Process-Induced Damage pp. 99 - 101
Main Authors Fukumoto, Y., Nishizuka, T., Ohmoto, S., Inoue, T., Nozawa, T., Nakaue, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1997
Subjects
Antenna measurements
Current measurement
Delay effects
Design for quality
Leakage current
MOS capacitors
Plasma devices
Plasma measurements
Stress
Voltage
Online AccessGet full text

Cover

More Information
ISBN:9780965157711
0965157717
DOI:10.1109/PPID.1997.596705