Colloidal processing of polymer ceramic nanocomposites for integral capacitors

• Published in: Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562) pp. 393 - 398
• Main Authors: Windlass, H., Raj, P.M., Balaraman, D., Bhattacharya, S.K., Tummala, R.R.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2001
• Subjects: Capacitance; Capacitors; Ceramics; Composite materials; Dielectric materials; Electrostatics; Nanocomposites; Polymers; Temperature; Titanium compounds
• ISBN: 9780930815646; 0930815645
• DOI: 10.1109/ISAOM.2001.916608

Polymer ceramic composites form a suitable material system for low temperature fabrication of embedded capacitors appropriate for MCM-L technology. Improved electrical properties such as permittivity can be achieved by efficient filling of polymers with high dielectric constant ceramic powders such as lead magnesium niobate-lead titanate (PMNPT) and barium titanate (BT). Photodefinable epoxies as the matrix polymer allow fine feature definition of the capacitor elements by conventional lithography techniques. The optimum weight percent of dispersant is tuned by monitoring the viscosity of the suspension. The dispersion mechanism (steric and electrostatic contributions) in a slightly polar solvent such as PGMEA is investigated from electrophoretic measurements. A high positive zeta potential is observed in the suspension, which suggests a strong contribution of electrostatic stabilization. By optimizing the particle packing using a bimodal distribution and modified processing methodology, dielectric constant greater than 135 was achieved (PMN-PT-epoxy). Suspensions are made with the lowest PGMEA content to ensure the efficiency of the dispersion and efficient particle packing in the dried film. Improved colloidal processing of nanoparticle-filled epoxy is a promising method to obtain ultra-thin capacitor films (<2 /spl mu/m) with high capacitance density and improved yield. Capacitance of 35 nF/cm/sup 2/ was achieved with the thinnest films (2.5-3.0 /spl mu/m).