Experimentally verified, temperature dependent physical models/parameters for power device simulation

This paper discusses the importance of reliable physical models/parameters used in drift-diffusion device simulation of power devices. Simple devices, diodes, and considerably more complicated structures, Gate Turn-Off thyristors (GTO:s) have been investigated. Using both electrical and optical meas...

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Bibliographic Details
Published inProceedings of the 6th International Symposium on Power Semiconductor Devices and Ics pp. 281 - 286
Main Authors Isberg, M., Jonsson, P., Masszi, F., Vojdani, F., Bleichner, H., Rosling, M., Nordlander, E.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1994
Subjects
Computational modeling
Computer simulation
Educational institutions
Electric variables measurement
Optical scattering
Radiative recombination
Semiconductor diodes
Silicon
Temperature dependence
Thyristors
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Summary:This paper discusses the importance of reliable physical models/parameters used in drift-diffusion device simulation of power devices. Simple devices, diodes, and considerably more complicated structures, Gate Turn-Off thyristors (GTO:s) have been investigated. Using both electrical and optical measurement techniques, comparisons have been made between measured data and simulated results. A proposal is made for new Auger recombination parameter values and for the temperature dependence of the Shockley-Read-Hall lifetime in the temperature range of 300-450 K.
ISBN:9780780314948
0780314948
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.1994.583742