Growth of InMnAsSb/InSb heterostructures with mid-infrared light-induced ferromagnetic properties

New diluted magnetic semiconductor InMnAsSb/InSb heterostructures were proposed and grown an InAs substrates by low-temperature molecular beam epitaxy. Raman scattering measurements show that InMnAsSb layer grown on InSb at 250/spl deg/C has higher crystal quality than that grown at 280/spl deg/C. L...

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Published inConference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) pp. 599 - 602
Main Authors Kanamura, M., Zhou, Y.K., Okumura, S., Asami, K., Nakajima, M., Harima, H., Asahi, H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2001
Subjects
Buffer layers
Magnetic semiconductors
Molecular beam epitaxial growth
Photonic band gap
Physics
Plasma temperature
Raman scattering
Substrates
Time measurement
X-ray diffraction
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Summary:New diluted magnetic semiconductor InMnAsSb/InSb heterostructures were proposed and grown an InAs substrates by low-temperature molecular beam epitaxy. Raman scattering measurements show that InMnAsSb layer grown on InSb at 250/spl deg/C has higher crystal quality than that grown at 280/spl deg/C. Light-induced ferromagnetic order was observed, for the first time, when these samples were illuminated with the light of wavelengths longer than 2 /spl mu/m. Corresponding to the Raman data, better light-induced ferromagnetic order was for the 250/spl deg/C-grown samples. The long-term preservation of the ferromagnetic order was confirmed even after the light-off.
ISBN:0780367006
9780780367005
ISSN:1092-8669
DOI:10.1109/ICIPRM.2001.929224