A complementary high current gain transistor for use in a CMOS compatible technology

The authors present a BJT (bipolar junction transistor) which is fabricated using a bulk CMOS technology. The device is essentially a MOSFET in which the gate and the well are internally connected to form the base of a lateral BJT. Complementary NPN and PNP BJTs with a current gain higher than 1000...

Full description

Saved in:
Bibliographic Details
Published inProceedings on Bipolar Circuits and Technology Meeting pp. 82 - 85
Main Authors Verdonckt-Vandebroek, S., Woo, J.C.S., Wong, S.S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1990
Subjects
BiCMOS integrated circuits
CMOS process
CMOS technology
Cutoff frequency
Implants
Interface states
Joining processes
MOSFET circuits
Ohmic contacts
Quasi-doping
Online AccessGet full text

Cover

More Information
Summary:The authors present a BJT (bipolar junction transistor) which is fabricated using a bulk CMOS technology. The device is essentially a MOSFET in which the gate and the well are internally connected to form the base of a lateral BJT. Complementary NPN and PNP BJTs with a current gain higher than 1000 are presented. Because of the moderate cutoff frequency (i.e., f/sub T/<5 GHz), the proposed BJT will mainly be used in BiCMOS processes for medium-speed, mostly CMOS, analog/digital applications.< >
DOI:10.1109/BIPOL.1990.171132