Growth and Characterization of Epitaxial Ge1-XSnx Alloys and Heterostructures Using a Commercial CVD System

Fully strained and relaxed epitaxial Ge1-xSnx alloys with Sn contents up to 12 at. % have been grown on Ge buffered Si using an Epsilon® 2000 Plus commercial chemical vapor deposition system. Using a specialized growth approach intrinsic, p-type, and n-type alloys have been demonstrated. Material an...

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Bibliographic Details
Published inECS transactions Vol. 64; no. 6; pp. 711 - 720
Main Authors Margetis, Joe, Ghetmiri, Seyed Amir, Du, Wei, Conley, Benjamin R, Mosleh, Aboozar, Soref, Richard, Sun, Greg, Domulevicz, Lucas, Naseem, Hameed A, Yu, Shui-Qing, Tolle, John
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 12.08.2014
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Summary:Fully strained and relaxed epitaxial Ge1-xSnx alloys with Sn contents up to 12 at. % have been grown on Ge buffered Si using an Epsilon® 2000 Plus commercial chemical vapor deposition system. Using a specialized growth approach intrinsic, p-type, and n-type alloys have been demonstrated. Material and optical characterization of these alloys indicate that the alloys are of high crystal quality in which the Sn is fully substitutional. Heterostructures of doped Ge/Ge1-xSnx/Ge have also grown to demonstrate their application in light emitting and detecting devices. Phosphorus doped Ge1-xSnx photoluminescence has also been observed at wavelengths up to 2.4 μm. Growth, materials and optical properties of these materials will be discussed.
ISSN:1938-5862
1938-6737
DOI:10.1149/06406.0711ecst