Studies of a 2E ground state V2+ ion in GaAs by TD-EPR

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Bibliographic Details
Published inJournal of physics. Condensed matter Vol. 5; no. 16; pp. 2553 - 2560
Main Authors Vasson, A -M, Vasson, A, El-Metoui, M, Tebbal, N
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 19.04.1993
Institute of Physics
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron paramagnetic resonance and relaxation
Exact sciences and technology
Iron group (3d) ions and impurities (ti-cu)
Magnetic resonances and relaxations in condensed matter, mössbauer effect
Physics
Semiconductor materials
Impurity
Thermal method
Defect level
Spin lattice relaxation
Vanadium
Ground state
Vibronic interaction
Experimental study
Inorganic compound
Gallium Arsenides
Investigation method
Angular variation
Oxidation number
Electron paramagnetic resonance
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ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/5/16/013