MgB2 superconducting thin films with a transition temperature of 39 kelvin

• Published in: Science (American Association for the Advancement of Science) Vol. 292; no. 5521; pp. 1521 - 1523
• Main Authors: KANG, W. N, KIM, Hyeong-Jin, CHOI, Eun-Mi, JUNG, C. U, LEE, Sung-Ik
• Format: Journal Article
• Language: English
• Published: Washington, DC American Association for the Advancement of Science 25.05.2001
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; High-tc films; Physics; Superconducting films and low-dimensional structures; Superconductivity; Inorganic compounds; Electrical conductivity; Epitaxial layers; Magnetic hysteresis; Pulsed laser deposition; XRD; Experimental study; Thin films; Superconducting films; Critical current; High-Tc superconductors; Magnesium borides; Superconducting transition
• ISSN: 0036-8075; 1095-9203
• DOI: 10.1126/science.1060822

We fabricated high-quality c axis-oriented epitaxial MgB2 thin films using a pulsed laser deposition technique. The thin films grown on (1 i 0 2) Al2O3 substrates have a transition temperature of 39 kelvin. The critical current density in zero field is approximately 6 x 10(6) amperes per cubic centimeter at 5 kelvin and approximately 3 x 10(5) amperes per cubic centimeter at 35 kelvin, which suggests that this compound has potential for electronic device applications, such as microwave devices and superconducting quantum interference devices. For the films deposited on Al2O3, x-ray diffraction patterns indicate a highly c axis-oriented crystal structure perpendicular to the substrate surface.