Resistive Feedback LNA design using a 7-parameter design-oriented model for advanced technologies

This paper presents a simple and efficient methodology for LNA design which uses the inversion level of the transistor as a design parameter in order to optimize the energy efficiency. The method uses a simple but accurate 7 parameter-based model valid in all regions of operation and allows an accur...

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Bibliographic Details
Published in2023 IEEE International Symposium on Circuits and Systems (ISCAS) pp. 1 - 5
Main Authors Bouchoucha, Mohamed Khalil, Pino-Monroy, Dayana A., Scheer, Patrick, Cathelin, Philippe, Fournier, Jean-Michel, Barragan, Manuel J., Cathelin, Andreia, Bourdel, Sylvain
Format Conference Proceeding
LanguageEnglish
Published IEEE 21.05.2023
Subjects
28 nm FD-SOI
design-oriented
inversion coefficient
LNA
low power
non-linearity
resistive feedback
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Summary:This paper presents a simple and efficient methodology for LNA design which uses the inversion level of the transistor as a design parameter in order to optimize the energy efficiency. The method uses a simple but accurate 7 parameter-based model valid in all regions of operation and allows an accurate preliminary sizing based on an analytical study. The proposed model describes the main short-channel effects in advanced technologies and allows an analytical evaluation of the LNA nonlinearity. A use case using a 28 nm FD-SOI technology is proposed to reflect that the methodology is well suited for designs at weak to moderate inversion level in an advanced technology for which simulation-based studies are often used for early sizing.
ISSN:2158-1525
DOI:10.1109/ISCAS46773.2023.10181341