Current Mode Monolithic Active Pixel Sensor With Correlated Double Sampling for Charged Particle Detection
A monolithic active pixel sensor operating in current mode for charged particle detection is described. The sensing element in each pixel is an n- well/p-sub diode with a PMOS transistor integrated in an n-well. The drop of the n-well potential from the collection of charge modulates the transistor...
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Published in | IEEE sensors journal Vol. 7; no. 1; pp. 137 - 150 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Institute of Electrical and Electronics Engineers
01.01.2007
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Subjects | |
Online Access | Get full text |
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Summary: | A monolithic active pixel sensor operating in current mode for charged particle detection is described. The sensing element in each pixel is an n- well/p-sub diode with a PMOS transistor integrated in an n-well. The drop of the n-well potential from the collection of charge modulates the transistor channel current. Each pixel features two current mode memory cells. The subtraction of distant-in-time samples frees the signal of fixed pattern noise (FPN) and of the correlated low-frequency temporal noise components, resulting in extraction of the particle footprint. The subtraction circuits are placed at each column end. A transimpedance amplifier, integrating in sequence two current samples and subtracting the results in an arithmetic operation, was adopted. The integrated version of the transimpedance amplifier, designed with a maximized conversion gain, is burdened by a risk of an early saturation, imperiling its operation, if the dispersions of the dc current component are too big. The degree of dispersions could not be estimated during the design. Some number of columns is available as a backup with the direct current readout. An external realization of the subtracting circuit, based on the same principle, is used to process direct output columns. The concept of the data acquisition setup developed, the tested performance of an array of cells, and the processing circuitry are described. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1530-437X |
DOI: | 10.1109/JSEN.2006.886897 |