In-Plane Tunability of Coplanar Microwave Devices by SrBi2Nb2O9 Ferroelectric Thin Films

• Published in: Ferroelectrics Vol. 362; no. 1; pp. 41 - 47
• Main Authors: Gensbittel, A., Dégardin, A. F., Guilloux-Viry, M., Kreisler, A. J.
• Format: Journal Article
• Language: English
• Published: London Taylor & Francis Group 01.01.2008; Taylor and Francis; Taylor & Francis: STM, Behavioural Science and Public Health Titles
• Subjects: Applied sciences; Chemical Sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; CPW; Dielectric loss and relaxation; dielectric permittivity; Dielectric properties of solids and liquids; Dielectric thin films; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Electronics; Exact sciences and technology; ferroelectric thin film; hysteretic loop; loss tangent; Material chemistry; Microwave and submillimeter wave devices, electron transfer devices; Permittivity (dielectric function); Physics; SBN; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; tunability; Dielectric loss; hysteretic loop; ferroelectric thin film; Microwave device; Coplanar transmission lines; Bismuth Niobates; Microwave; CPW; Thin film; Thickness; dielectric permittivity; Ferroelectricity; Ferroelectric materials; Line width; Strontium niobates; Coplanar waveguides; loss tangent; Permittivity; tunability; SBN; Strontium bismuth niobate
• ISSN: 0015-0193; 1563-5112
• DOI: 10.1080/00150190801998128

In order to investigate the dielectric properties of SrBi 2 Nb 2 O 9 (SBN) ferroelectric thin films in the microwave frequency range, we have characterized coplanar waveguide transmission lines patterned in Au/SBN heterostructures deposited on MgO single-crystals. Various line widths and ferroelectric film thicknesses were considered. From measurements performed in the 500 MHz to 40 GHz range, the values of SBN dielectric permittivity and loss tangent were extracted. Results showed the potential interest of SBN films to develop microwave agile devices. The ferroelectric behaviour of the SBN films was also studied.