Hall-Effect Measurements of Sol--Gel Derived CuInS2 Thin Films for Photovoltaic Applications

CuInS 2 thin films were prepared via the sol--gel process. X-ray diffraction (XRD) studies reveal that the thin films are well crystallized and they crystallize in a chalcopyrite phase. Hall-effect measurements were carried out, for the first time, on chalcopyrite CuInS 2 films elaborated by the sol...

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Published inApplied physics express Vol. 5; no. 12; pp. 125801 - 125801-3
Main Authors Bourlier, Yoan, Bernard, Rémy, Lethien, Christophe, Roussel, Pascal, Zegaoui, Malek, Bouazaoui, Mohamed, Rolland, Nathalie, Rolland, Paul Alain
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.12.2012
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Summary:CuInS 2 thin films were prepared via the sol--gel process. X-ray diffraction (XRD) studies reveal that the thin films are well crystallized and they crystallize in a chalcopyrite phase. Hall-effect measurements were carried out, for the first time, on chalcopyrite CuInS 2 films elaborated by the sol--gel method. Hence, the resistivity of the p-type CuInS 2 films was found to be around 40 $\Omega$$\cdot$cm and the carrier density was in the $10^{16}$ cm -3 range. Furthermore, the UV--vis absorption spectra show that the energy bandgap is 1.47 eV, a value close to the most favorable bandgap (1.53 eV) for solar cells.
Bibliography:Description of the technological process flow used to pattern the CuInS 2 absorbing layer. XRD of 3-, 4-, and 5-layered calcinated films (a) and their corresponding sulfurized films (b) on SLG substrate. SEM image of calcinated 5-layered film on silicon wafer. SEM image of chalcopyrite 5-layered film on silicon wafer. Optical transmittance spectrum of CuInS 2 film and in the inset, plot of $(\alpha h\nu)^{2}$ versus $h\nu$.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.5.125801