Novel back-biased UTBB lateral SCR for FDSOI ESD protections

For the first time, a Lateral SCR (Silicon Controlled Rectifier) with Ultra-Thin Body and Buried Oxide (UTBB) is experimentally demonstrated. This device is dedicated to Electro-Static Discharge (ESD) protection and has been designed and fabricated with 28 nm Fully Depleted SOI technology. A new con...

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Published in2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) pp. 222 - 225
Main Authors Solaro, Yohann, Fonteneau, Pascal, Legrand, Charles-Alexandre, Fenouillet-Beranger, Claire, Ferrari, Philippe, Cristoloveanu, Sorin
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2013
Subjects
Electrostatic discharges
Integrated circuits
Leakage currents
Logic gates
MOSFET
Thyristors
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Summary:For the first time, a Lateral SCR (Silicon Controlled Rectifier) with Ultra-Thin Body and Buried Oxide (UTBB) is experimentally demonstrated. This device is dedicated to Electro-Static Discharge (ESD) protection and has been designed and fabricated with 28 nm Fully Depleted SOI technology. A new control technique is proposed: the use of back-gate biasing. Characteristics such as low leakage, controllable triggering (as a function of back gate voltage and ground-plane type), and device geometry are explored. We discuss several configurations (floating or locked P-base) and show promising results in terms of ESD protection performance.
ISSN:1930-8876
DOI:10.1109/ESSDERC.2013.6818859