Full-Band Monte Carlo Study of Hot Carriers for Advection-Diffusion Monte Carlo Simulations

Diffusion of carriers under high electric field is studied using full-band Monte Carlo simulations. The diffusion of hot carriers is found to be strongly anisotropic with respect to the electric field direction and to be times higher than the one predicted by the Einstein's law. A new calibrati...

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Published in2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) pp. 369 - 372
Main Authors Helleboid, Remi, Saint-Martin, Jerome, Pala, Marco, Dollfus, Philippe, Mugny, Gabriel, Nicholson, Isobel, Rideau, Denis
Format Conference Proceeding
LanguageEnglish
Published The Japan Society of Applied Physics 27.09.2023
Subjects
avalanche
Calibration
diffusion
Electric fields
electronic transport
full-band Monte Carlo
Hot carriers
Monte Carlo methods
photodiode
Semiconductor process modeling
Silicon
Space charge
SPAD
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Summary:Diffusion of carriers under high electric field is studied using full-band Monte Carlo simulations. The diffusion of hot carriers is found to be strongly anisotropic with respect to the electric field direction and to be times higher than the one predicted by the Einstein's law. A new calibration of analytical models is proposed to account for the anisotropy of the diffusion coefficient as well of the impact of the electric field. The effect of the new model is illustrated by studying its impact on the lateral and longitudinal spread of the electronic avalanches that occur in single-photon avalanche diodes, using advection-diffusion Monte Carlo.
DOI:10.23919/SISPAD57422.2023.10319557