Low-Temperature-Grown Gallium Arsenide Photoconductors with Photoresponse reaching 25 mA/W under 1550nm CW excitation

We show in this communication that photoconductors based on GaAs grown at low temperature can exhibit photoresponses as high as 25 mA/W under continuous-wave 1550-nm-wavelength illumination. It is achieved by using an optical Fabry-Pérot cavity in order to improve the external quantum efficiency and...

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Published in2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) p. 1
Main Authors Tannoury, C., Billet, M., Coinon, C., Lampin, J-F., Peytavit, E.
Format Conference Proceeding
LanguageEnglish
Published IEEE 08.11.2020
Subjects
Annealing
Gallium arsenide
Lighting
Photoconducting materials
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Summary:We show in this communication that photoconductors based on GaAs grown at low temperature can exhibit photoresponses as high as 25 mA/W under continuous-wave 1550-nm-wavelength illumination. It is achieved by using an optical Fabry-Pérot cavity in order to improve the external quantum efficiency and by decreasing the post growth annealing temperature down-to 450 °C.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz46771.2020.9370757