Suppression of high-frequency electronic noise induced by 2D plasma waves in field-effect and high-electron-mobility transistors

A theoretical model based on simple hydrodynamic equations coupled with a pseudo-2D Poisson equation is used to calculate numerically and to analyze analitically electronic noise in FET/HEMT channels induced in the THz frequency range by the thermal excitation of 2D-plasma waves. The influence of un...

Full description

Saved in:
Bibliographic Details
Published in2011 21st International Conference on Noise and Fluctuations pp. 180 - 183
Main Authors Marinchio, H., Palermo, C., Varani, L., Shiktorov, P., Starikov, E., Gruzinskis, V.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2011
Subjects
HEMTs
Logic gates
Noise
Plasma waves
Plasmas
Resonant frequency
Online AccessGet full text

Cover

More Information
Summary:A theoretical model based on simple hydrodynamic equations coupled with a pseudo-2D Poisson equation is used to calculate numerically and to analyze analitically electronic noise in FET/HEMT channels induced in the THz frequency range by the thermal excitation of 2D-plasma waves. The influence of ungated regions on high-frequency (HF) noise is considered. An efficient suppression of HF noise is found to take place in the case of additional ungated region placed between the gate and drain contacts.
ISBN:9781457701894
1457701898
DOI:10.1109/ICNF.2011.5994294