Suppression of high-frequency electronic noise induced by 2D plasma waves in field-effect and high-electron-mobility transistors
A theoretical model based on simple hydrodynamic equations coupled with a pseudo-2D Poisson equation is used to calculate numerically and to analyze analitically electronic noise in FET/HEMT channels induced in the THz frequency range by the thermal excitation of 2D-plasma waves. The influence of un...
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Published in | 2011 21st International Conference on Noise and Fluctuations pp. 180 - 183 |
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Main Authors | , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.06.2011
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Subjects | |
Online Access | Get full text |
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Summary: | A theoretical model based on simple hydrodynamic equations coupled with a pseudo-2D Poisson equation is used to calculate numerically and to analyze analitically electronic noise in FET/HEMT channels induced in the THz frequency range by the thermal excitation of 2D-plasma waves. The influence of ungated regions on high-frequency (HF) noise is considered. An efficient suppression of HF noise is found to take place in the case of additional ungated region placed between the gate and drain contacts. |
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ISBN: | 9781457701894 1457701898 |
DOI: | 10.1109/ICNF.2011.5994294 |