Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures

This paper presents a systematic analysis of the use of the linear combination of bulk bands based on the empirical pseudopotential method to obtain the bandstructure of confined nanostructures. The relevance of interband coupling between conduction and valence bands in III-V materials is highlighte...

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Bibliographic Details
Published in2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) pp. 224 - 227
Main Authors Rideau, Denis, Mugny, Gabriel, Pala, Marco, Esseni, David
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2018
Subjects
bandstructure
Couplings
Empirical pseudopotentials
InAs
linear combination of bulk bands
Nanostructures
Semiconductor process modeling
Systematics
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Summary:This paper presents a systematic analysis of the use of the linear combination of bulk bands based on the empirical pseudopotential method to obtain the bandstructure of confined nanostructures. The relevance of interband coupling between conduction and valence bands in III-V materials is highlighted.
ISSN:1946-1577
DOI:10.1109/SISPAD.2018.8551706