Monte Carlo simulation of low-frequency excess noise in InP MOSFETs/HEMTs at impact ionization conditions

Theoretical investigation of the impact ionization and accompanying effects in InP submicron MOSFET/HEMT channels is performed by Monte Carlo Particle (MCP) simulation coupled with pseudo-2D Poisson equation. Main attention is paid to the low-frequency microwave noise. It is shown that there takes p...

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Published in2013 22nd International Conference on Noise and Fluctuations (ICNF) pp. 1 - 3
Main Authors Shiktorov, Pavel, Gruzinskis, Viktoras, Starikov, Evgenij, Palermo, Christophe, Torres, Jeremie, Varani, Luca
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2013
Subjects
Impact ionization
Indium phosphide
Logic gates
Low-frequency noise
Monte Carlo methods
Spontaneous emission
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Summary:Theoretical investigation of the impact ionization and accompanying effects in InP submicron MOSFET/HEMT channels is performed by Monte Carlo Particle (MCP) simulation coupled with pseudo-2D Poisson equation. Main attention is paid to the low-frequency microwave noise. It is shown that there takes place a sharp growth of the excess low-frequency noise near the threshold of the development of the instability originated by the uncontrollable process of the impact ionization. It is found that the spectrum of the excess low-frequency noise in the pre-threshold region manifests the 1/f behavior in the frequency region 0.1 ÷ 1 GHz.
ISBN:1479906689
9781479906680
DOI:10.1109/ICNF.2013.6578932