Monte Carlo simulation of low-frequency excess noise in InP MOSFETs/HEMTs at impact ionization conditions
Theoretical investigation of the impact ionization and accompanying effects in InP submicron MOSFET/HEMT channels is performed by Monte Carlo Particle (MCP) simulation coupled with pseudo-2D Poisson equation. Main attention is paid to the low-frequency microwave noise. It is shown that there takes p...
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Published in | 2013 22nd International Conference on Noise and Fluctuations (ICNF) pp. 1 - 3 |
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Main Authors | , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.06.2013
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Subjects | |
Online Access | Get full text |
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Summary: | Theoretical investigation of the impact ionization and accompanying effects in InP submicron MOSFET/HEMT channels is performed by Monte Carlo Particle (MCP) simulation coupled with pseudo-2D Poisson equation. Main attention is paid to the low-frequency microwave noise. It is shown that there takes place a sharp growth of the excess low-frequency noise near the threshold of the development of the instability originated by the uncontrollable process of the impact ionization. It is found that the spectrum of the excess low-frequency noise in the pre-threshold region manifests the 1/f behavior in the frequency region 0.1 ÷ 1 GHz. |
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ISBN: | 1479906689 9781479906680 |
DOI: | 10.1109/ICNF.2013.6578932 |