Electrical injection in GaP-based laser waveguides and active areas

This paper presents the recent advances in device engineering towards the fabrication of an electrically pumped laser on GaP substrate for photonic integration on silicon. The letter first presents the electrical properties of a GaP-based PIN diode, in particular the reduction of the characteristic...

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Published in26th International Conference on Indium Phosphide and Related Materials (IPRM) pp. 1 - 2
Main Authors Gauthier, Jean-Philippe, Robert, Cedric, Almosni, Samy, Cornet, Charles, Leger, Yoan, Perrin, Mathieu, Letoublon, Antoine, Levallois, Christophe, Paranthoen, Cyril, Burin, Jean-Philippe, Even, Jacky, Rohel, Tony, Tavernier, Karine, Lepouliquen, Julie, Carrere, Helene, Balocchi, Andrea, Marie, Xavier, Durand, Olivier
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2014
Subjects
Metals
Nitrogen
Photoluminescence
Semiconductor lasers
Silicon
Substrates
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Summary:This paper presents the recent advances in device engineering towards the fabrication of an electrically pumped laser on GaP substrate for photonic integration on silicon. The letter first presents the electrical properties of a GaP-based PIN diode, in particular the reduction of the characteristic resistance of the p-contact, thanks to a judicious combination of metal choice and thermal annealing. Secondly, carrier injection in the active area is investigated by use of time-resolved photoluminescence, regarding particularly the nature and composition of the barrier and quantum wells materials, with a focus on the nitrogen incorporation issues.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2014.6880545