Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs

Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, L GD . While breakdown voltages and critical voltages scale almost linearly with L GD , failure mode rema...

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Published in2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) pp. 1 - 6
Main Authors Gao, Zhan, Meneghini, Matteo, Harrouche, Kathia, Kabouche, Riad, Chiocchetta, Francesca, Okada, Etienne, Rampazzo, Fabiana, De Santi, Carlo, Medjdoub, Farid, Meneghesso, Gaudenzio, Zanoni, Enrico
Format Conference Proceeding
LanguageEnglish
Published IEEE 20.07.2020
Subjects
AINIGaN HEMTs
breakdown mechanism
Degradation
Electric breakdown
electric field
HEMTs
Logic gates
MODFETs
radio frequency
Reliability
Stress
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Summary:Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, L GD . While breakdown voltages and critical voltages scale almost linearly with L GD , failure mode remains almost unchanged in the nine device groups, and consists in an increase of gate leakage, accompanied by a positive shift of threshold voltage. In off-state, electroluminescence images detect the presence of localized leakage paths which may correspond to dislocations and act as preferential paths for electron trapping. Degradation is therefore preliminary attributed to hot-electron trapping, enhanced by electric fields.
ISSN:1946-1550
DOI:10.1109/IPFA49335.2020.9260793