Role of pO2 and film microstructure on the memristive properties of La2NiO4+δ/LaNiO3−δ bilayers

LaNiO3/La2NiO4 bilayers deposited at varying pO2 conditions resulted in remarkable differences in film microstructure and cell parameters, directly affecting the electrical behaviour of Pt/LaNiO3/La2NiO4/Pt devices. The devices deposited at low pO2 showed the largest memristance. We propose this is...

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Bibliographic Details
Published inJournal of materials chemistry. A, Materials for energy and sustainability Vol. 10; no. 12; pp. 6523 - 6530
Main Authors Maas, Klaasjan, Wulles, Chloé, Caicedo Roque, Jose Manuel, Ballesteros, Belén, Lafarge, Valentin, Santiso, José, Burriel, Mónica
Format Journal Article
LanguageEnglish
Published Cambridge Royal Society of Chemistry 01.01.2022
Subjects
Chemical Sciences
Depletion
Electric contacts
Electric fields
Lanthanum oxides
Material chemistry
Microstructure
Oxygen ions
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Summary:LaNiO3/La2NiO4 bilayers deposited at varying pO2 conditions resulted in remarkable differences in film microstructure and cell parameters, directly affecting the electrical behaviour of Pt/LaNiO3/La2NiO4/Pt devices. The devices deposited at low pO2 showed the largest memristance. We propose this is due to the formation of a p-type Schottky contact between LaNiO3 and La2NiO4, where the extent of its carrier depletion width can be modulated by the electric-field induced drift of interstitial oxygen ions acting as mobile acceptor dopants in La2NiO4.
ISSN:2050-7488
2050-7496
DOI:10.1039/d1ta10296f