Role of pO2 and film microstructure on the memristive properties of La2NiO4+δ/LaNiO3−δ bilayers
LaNiO3/La2NiO4 bilayers deposited at varying pO2 conditions resulted in remarkable differences in film microstructure and cell parameters, directly affecting the electrical behaviour of Pt/LaNiO3/La2NiO4/Pt devices. The devices deposited at low pO2 showed the largest memristance. We propose this is...
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Published in | Journal of materials chemistry. A, Materials for energy and sustainability Vol. 10; no. 12; pp. 6523 - 6530 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Cambridge
Royal Society of Chemistry
01.01.2022
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Subjects | |
Online Access | Get full text |
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Summary: | LaNiO3/La2NiO4 bilayers deposited at varying pO2 conditions resulted in remarkable differences in film microstructure and cell parameters, directly affecting the electrical behaviour of Pt/LaNiO3/La2NiO4/Pt devices. The devices deposited at low pO2 showed the largest memristance. We propose this is due to the formation of a p-type Schottky contact between LaNiO3 and La2NiO4, where the extent of its carrier depletion width can be modulated by the electric-field induced drift of interstitial oxygen ions acting as mobile acceptor dopants in La2NiO4. |
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ISSN: | 2050-7488 2050-7496 |
DOI: | 10.1039/d1ta10296f |