Low-Temperature-grown GaAs photoconductors suitable for 1550nm-wavelength illumination

In this communication, we show that ultrafast photoconductors based on low-temperature-grown Gallium Arsenide material exhibit photoresponse values reaching 11 mA/W under 1550 nm CW excitation. This is obtained by using an optical microcavity based on a buried metal layer acting as back reflecting m...

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Bibliographic Details
Published in2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) pp. 1 - 2
Main Authors Tannoury, C., Billet, M., Coinon, C., Lampin, J-F., Peytavit, E.
Format Conference Proceeding
LanguageEnglish
Published IEEE 29.08.2021
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Summary:In this communication, we show that ultrafast photoconductors based on low-temperature-grown Gallium Arsenide material exhibit photoresponse values reaching 11 mA/W under 1550 nm CW excitation. This is obtained by using an optical microcavity based on a buried metal layer acting as back reflecting mirror and a top grating electrode in order to improve the external quantum efficiency and by decreasing the post growth annealing temperature of the LT-GaAs layer downto 450 °C. Frequency response measurements are carried out up to 67 GHz by using a 1550-nm-wavelength optical-heterodyne experiment.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz50926.2021.9567204