High emission and detection efficiency of terahertz beam with heavy-ion-irradiated InP material excited at 0.8 μm

The performance from a high-energy Br+-irradiated InP photoconductive antenna excited at 800 nm has been investigated. The ionic irradiation into InP reduces significantly the lifetime of photo-carriers in the substrate material down to 1.4 ps without the requirement of an epitaxial layer growth. TH...

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Bibliographic Details
Published inElectronics letters Vol. 42; no. 15; pp. 879 - 880
Main Authors MOUNAIX, P, TONDUSSON, M, CHIMOT, N, MANGENEY, J, BLARY, K, LAMPIN, J. F
Format Journal Article
LanguageEnglish
Published London Institution of Electrical Engineers 20.07.2006
IET
Subjects
Exact sciences and technology
Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques
Infrared, submillimeter wave, microwave and radiowave sources
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Physics
Wave detection
THz range
Wave emission
Heavy ions
Ion irradiation
Photoreceptor
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Summary:The performance from a high-energy Br+-irradiated InP photoconductive antenna excited at 800 nm has been investigated. The ionic irradiation into InP reduces significantly the lifetime of photo-carriers in the substrate material down to 1.4 ps without the requirement of an epitaxial layer growth. THz emitter and detector efficiency are strongly dependent on irradiation doses. It was found that equivalent bandwidth and amplitude compared with LTG-GaAs switches excited at 800 nm under the same experimental conditions.
ISSN:0013-5194
1350-911X
DOI:10.1049/el:20061529