Lifetime and wearout current modeling of ultra-thin oxide antifuse bitcells using transient characterization

The lifetime modeling of antifuse bit cells is studied using transient measurements. Firstly, the wearout current is successfully modeled as Fowler-Nordheim. Secondly, the TDDB power-law voltage acceleration model is validated down to 30 0ns for a stress voltage of 5.5 V. Lifetime results are compar...

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Bibliographic Details
Published in2010 IEEE International Memory Workshop pp. 1 - 4
Main Authors Deloge, M, Allard, B, Candelier, P, Damiens, J, Le-Roux, E, Rafik, M
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2010
Subjects
Acceleration
Antifuse
breakdown
Breakdown voltage
Capacitors
Current measurement
Dielectrics
Electric breakdown
Electrical resistance measurement
Fowler-Nordheim
Hydrogen
Hydrogen release
lifetime
memory
Reliability theory
Stress
TDDB
ultra-thin oxide
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Summary:The lifetime modeling of antifuse bit cells is studied using transient measurements. Firstly, the wearout current is successfully modeled as Fowler-Nordheim. Secondly, the TDDB power-law voltage acceleration model is validated down to 30 0ns for a stress voltage of 5.5 V. Lifetime results are compared with the Multi-Vibrational Hydrogen Release Model.
ISBN:9781424467198
1424467195
ISSN:2159-483X
DOI:10.1109/IMW.2010.5488412